FKCA2030
FKCA2030 is Dual N-Channel MOSFET manufactured by FETek.
Description
DFN3x3 Pin Configuration
The FKCA2030 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
Pin1
The FKCA2030 meet the Ro HS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM PD@TC=25℃ PD@TA=25℃
TSTG TJ
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation1 Total Power Dissipation1 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Data and specifications subject to change without notice. .fetek..tw Ver : A
Rating 20 ±8 56 35.6 19 15 100 31 3.6
-55 to 150 -55 to 150
Units V V A A A A A W W ℃ ℃
Typ. -----
Max. 35 4
Unit ℃/W ℃/W
FETek Technology Corp.
Dual N-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS
Parameter Drain-Source Breakdown Voltage
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
IDSS
IGSS gfs
Qg
Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current Forward Transconductance Total Gate Charge (4.5V) Total Gate Charge (3.9V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250u A VGS=4.5V , ID=3A VGS=3.9V , ID=3A VGS=2.5V , ID=3A VGS=1.8V , ID=3A VGS=VDS , ID =250u A VDS=16V , VGS=0V , TJ=25℃ VDS=16V , VGS=0V , TJ=55℃ VGS=±8V , VDS=0V VDS=5V , ID=3A
VDS=10V ,...