FKD0028
FKD0028 is N-Channel MOSFET manufactured by FETek.
Description
The FKD0028 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD0028 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
TO252 Pin Configuration
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Rating 100 ±20 14 10 4 3 25 0.8 4 30 2.7
-55 to 175 -55 to 175
Units V V A A A A A m J A W W ℃ ℃
Typ. -----
Max. 55 5
Unit ℃/W ℃/W
Data and specifications subject to change without notice.
.fetek..tw Ver : A
FETek Technology Corp.
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS
RDS(ON)
Parameter Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS
Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250u A VGS=10V , ID=5A VGS=4.5V , ID=3A VGS=VDS , ID =250u A VDS=80V , VGS=0V , TJ=25℃ VDS=80V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=5A VDS=0V , VGS=0V , f=1MHz
VDS=50V , VGS=10V , ID=5A
VDD=50V ,...