FKD0103 Datasheet | FETek

Features - Advanced Trench MOS Technology - 100% EAS Guaranteed - Reliable and Rugged - Green Device Available Applications - Power Management. - DC Motor Control. P-Ch 100V Fast Switching MOSFETs Product Summary BVDSS -100V RDSON 210mΩ ID -8.7A TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice. .fetek..tw Ver : A Rating -100 ±20 -8.7 -5.5 -2.1 -1.7 -17.4 49 -14 34.7 2 -55 to 150 -55 to 150 Units V V A A A A A m J A W W ℃ ℃ Typ. ----- Max. 62 3.6 Unit ℃/W ℃/W FETek Technology Corp. P-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold...