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FKD18N20 - N-Channel MOSFET

Description

The FKD18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

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Datasheet Details

Part number FKD18N20
Manufacturer FETek
File Size 662.89 KB
Description N-Channel MOSFET
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FETek Technology Corp.  Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKD18N20 N-Ch 200V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 200V 170mΩ 18A Description TO252 Pin Configuration The FKD18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The FKD18N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
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