FKD18N20
FKD18N20 is N-Channel MOSFET manufactured by FETek.
Description
TO252 Pin Configuration
The FKD18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The FKD18N20 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Rating 200 ±20 18 11.7 40 15 10 83
-55 to 150 -55 to 150
Typ. -----
Max. 60 1.5
Units V V A A A m J A W ℃ ℃
Unit ℃/W ℃/W
Data and specifications subject to change without notice.
.fetek..tw Ver : A
FETek Technology Corp.
N-Ch 200V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS RDS(ON)
VGS(th)
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Static Drain-Source On-Resistance2 Gate Threshold Voltage
IDSS
Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250u A VGS=10V , ID=9A VGS=4.5V , ID=9A VGS=VDS , ID =250u A VDS=160V , VGS=0V , TJ=25℃ VDS=160V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=9A VDS=0V , VGS=0V , f=1MHz
VDS=80V , VGS=10V , ID=9A
VDD=50V , VGS=10V , RG=3.3 ID=9A
VDS=25V , VGS=0V , f=1MHz
Min. Typ. Max....
