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FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKD18N20
N-Ch 200V Fast Switching MOSFETs
Product Summary
BVDSS
RDSON
ID
200V
170mΩ
18A
Description
TO252 Pin Configuration
The FKD18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The FKD18N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.