FKD3018 - N-Channel MOSFET

Description

The FKD3018 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications.

The FKD3018 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

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FKD3018 N-Channel MOSFET by FETek - Datasheet Preview — Datasheet preview – FKD3018

Datasheet Details

Part number	FKD3018
Manufacturer	FETek
File Size	421.49 KB
Description	N-Channel MOSFET
Datasheet	FKD3018 Datasheet
Additional preview pages of the FKD3018 datasheet.

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Full PDF Text Transcription

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FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKD3018 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS 30V RDSON 3mΩ ID 155A Description The FKD3018 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications. The FKD3018 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Published: Jan 4, 2019 |