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FKD6006 - N-Channel MOSFET

General Description

The FKD6006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKD6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

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Datasheet Details

Part number FKD6006
Manufacturer FETek
File Size 460.14 KB
Description N-Channel MOSFET
Datasheet download datasheet FKD6006 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FETek Technology Corp.  Super Low Gate Charge  100% EAS Guaranteed  Excellent CdV/dt effect decline  Green Device Available  Advanced high cell density Trench technology Description The FKD6006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.