FKH6115 Datasheet | FETek

Description The FKH6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKH6115 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. P-Ch 60V Fast Switching MOSFETs Product Summary BVDSS -60V RDSON 25mΩ ID -45A TO263 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -60 ±20 -45 -34 -90 113 47.6 86.8 -55 to 150 -55 to 150 Units V V A A A m J A W ℃ ℃ Typ. ----- Max. 62 1.44 Unit ℃/W ℃/W Data and specifications subject to change without notice. .fetek..tw Ver : A FETek Technology Corp. P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss...