Datasheet4U Logo Datasheet4U.com

FKN3113 - P-Channel MOSFET

Description

The FKN3113 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The FKN3113 meet the RoHS and Green Product requirement with full function reliability approved.

📥 Download Datasheet

Datasheet preview – FKN3113

Datasheet Details

Part number FKN3113
Manufacturer FETek
File Size 451.35 KB
Description P-Channel MOSFET
Datasheet download datasheet FKN3113 Datasheet
Additional preview pages of the FKN3113 datasheet.

📁 Similar Datasheet

  • FKN300 - Wirewound Resistors (YAGEO)
  • FKN3WS - Wirewound Resistors (YAGEO)
  • FKN-50 - Wirewound Resistors (YAGEO)
  • FKN08PN40 - TRIAC (Fairchild Semiconductor)
  • FKN08PN60 - TRIAC (Fairchild Semiconductor)
  • FKN100 - Wirewound Resistors (YAGEO)
  • FKN1N60SA - TRIAC (Fairchild Semiconductor)
  • FKN1WS - Wirewound Resistors (YAGEO)
  • FKN200 - Wirewound Resistors (YAGEO)
  • FKN2L60 - Bi-Directional Triode Thyristor Planar Silicon (Fairchild Semiconductor)
Other Datasheets by FETek

Full PDF Text Transcription

Click to expand full text
FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKN3113 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 40mΩ ID -4.2A Description The FKN3113 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3113 meet the RoHS and Green Product requirement with full function reliability approved.
Published: |