FKP18N20
FKP18N20 is N-Channel MOSFET manufactured by FETek.
Description
TO220 Pin Configuration
The FKP18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKP18N20 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Rating 200 ±20 18 11.7 40 15 10 83
-55 to 150 -55 to 150
Typ. -----
Max. 60 1.1
Units V V A A A m J A W ℃ ℃
Unit ℃/W ℃/W
Data and specifications subject to change without notice.
.fetek..tw Ver : A
FETek Technology Corp.
N-Ch 200V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS RDS(ON)
VGS(th)
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Static Drain-Source On-Resistance2 Gate Threshold Voltage
IDSS
Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250u A VGS=10V , ID=9A VGS=4.5V , ID=9A VGS=VDS , ID =250u A VDS=160V , VGS=0V , TJ=25℃ VDS=160V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=9A VDS=0V , VGS=0V , f=1MHz
VDS=80V , VGS=10V , ID=9A
VDD=50V , VGS=10V , RG=3.3 ID=9A
VDS=25V , VGS=0V , f=1MHz
Min. Typ. Max....
