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FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKP18N20
N-Ch 200V Fast Switching MOSFETs
Product Summary
BVDSS
RDSON
ID
200V
170mΩ
18A
Description
TO220 Pin Configuration
The FKP18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKP18N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.