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FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKQ2510
N-Ch 20V Fast Switching MOSFETs
Product Summary
BVDSS 20V
RDSON 37mΩ
ID 4.5A
Description
The FKQ2510 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications The FKQ2510 meet the RoHS and Green Product requirement with full function reliability approved.
TSOP6 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.
FKQ2510 Datasheet
