FKR6016 Datasheet | FETek

Description TO251 Pin Configuration The FKR6016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR6016 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 60 ±20 47 30 9.2 7.5 100 72.2 38 52 2 -55 to 150 -55 to 150 Units V V A A A A A m J A W W ℃ ℃ Typ. ----- Max. 62 2.4 Unit ℃/W ℃/W Data and specifications subject to change without notice. .fetek..tw Ver : A FETek Technology Corp. N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250u A Reference to 25℃ , ID=1m A VGS=10V , ID=30A VGS=4.5V , ID=15A VGS=VDS , ID =250u A VDS=48V , VGS=0V , TJ=25℃...