FKS0204 Datasheet | FETek

Description The FKS0204 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKS0204 meets the Ro HS and Green Product requirement with full function reliability approved. SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice. .fetek..tw Ver : A Rating 100 ±20 2.5 2 10 6.1 11 1.5 -55 to 150 -55 to 150 Units V V A A A m J A W ℃ ℃ Typ. ----- Max. 85 36 Unit ℃/W ℃/W FETek Technology Corp. Dual N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250u A Reference to 25℃ , ID=1m A VGS=10V , ID=2A VGS=4.5V , ID=1A VGS=VDS , ID =250u A VDS=80V , VGS=0V , TJ=25℃ VDS=80V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=2A VDS=0V , VGS=0V , f=1MHz VDS=60V , VGS=10V , ID=2A VDD=50V , VGS=10V , RG=3.3 ID=1A VDS=15V ,...