FKS3018B Datasheet | FETek

Description The FKS3018B is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS3018B meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS RDSON 30V 3mΩ 24A SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Rating 30 ±20 24 15 175 80 40 3.1 -55 to 150 -55 to 150 Units V V A A A m J A W ℃ ℃ Typ. ----- Max. 40 75 Unit ℃/W ℃/W Data and specifications subject to change without notice. .fetek..tw Ver : A FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold...