FKS3101 Datasheet | FETek

Description The FKS3101 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS3101 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 42mΩ ID -5.5A SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -30 ±20 -5.5 -4.5 -25 18.1 -19 1.5 -55 to 150 -55 to 150 Units V V A A A m J A W ℃ ℃ Typ. ----- Max. 85 25 Unit ℃/W ℃/W Data and specifications subject to change without notice. .fetek..tw Ver : A FETek Technology Corp. P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss...