FKUC2301
Description
The FKUC2301 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKUC2301 meet the Ro HS and Green Product requirement with full function reliability approved.
SOT23S Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJA
Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-ambient1(t≤10s)
Rating -20 ±12 -3.3 -2.6 -13 1.4
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Typ. -----
Max. 125 90
Unit ℃/W ℃/W
Data and specifications subject to change without notice.
.fetek..tw Ver : B
FETek Technology Corp.
FKUC2301 3 P-Ch...
