MAXIMUM RATINGS
（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO -35 V VCEO -30 V VEBO -5 V IC -800 mA PC -625 mW TJ 150 ℃ Tstg ﹣55~150 ℃ A1271 —PNP silicon —
●●ELECTRICAL CHARACTERISTICS
（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Common Emitter DC Current Gain hFE 100 320 VCE= -1V，Ic= -100mA Collector Cut-off Current ICBO -0.1 µA VCB= -35V，IE=0 Emitter Cut-off Current IEBO -0.1 µA VEB= -5V，Ic=0 Collector-Base Breakdown Voltage BVCBO -35 V Ic= -0.1mA，IE=0 Collector-Emitter Breakdown Voltage BVCEO -30 V Ic= -10mA，IB=0 Emitter-Base Breakdown Voltage BVEBO -5 V IE= -0.1mA，Ic=0 Base-Emitter Voltage VBE -0.5 -0.8 V VCE= -1V，Ic= -10mA Collector-Emitter Saturation Voltage VCE(sat) -0.7 V Ic= -500mA，IB= -20mA Gain bandwidth product fT 120 MHz Ic= -10mA，VCE= -5V Common Base Output Capacitance Cob 19 PF VCB= -10V, IE=0, f = 1...
FGX