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■■APPLICATION：General Purpose Amplifier Applications..
A844
—PNP silicon —
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -55 -55 -5 -100 300 150 V V V mA mW ℃
﹣55~150 ℃
■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO -55 -55 -5 -0.66 -0.1 200 2 -0.75 -0.5 MIN. 160 TYP. MAX. UNIT 500 -0.1 -0.05 µA µA V V V V V TEST CONDITION VCE= -12V，Ic= -2mA VCB= -18V，IE=0 VEB= -2V，Ic=0 Ic= -0.1mA，IE=0 Ic= -1mA，IB=0 IE= -0.
A844 Datasheet
