APPLICATIONS
.. A844 —PNP silicon —
●●MAXIMUM RATINGS
（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -55 -55 -5 -100 300 150 V V V mA mW ℃ ﹣55~150 ℃
●●ELECTRICAL CHARACTERISTICS
（Ta=25℃） PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO -55 -55 -5 -0.66 -0.1 200 2 -0.75 -0.5 MIN. 160 TYP. MAX. UNIT 500 -0.1 -0.05 µA µA V V V V V TEST CONDITION VCE= -12V，Ic= -2mA VCB= -18V，IE=0 VEB= -2V，Ic=0 Ic= -0.1mA，IE=0 Ic= -1mA，IB=0 IE= -0.1mA，Ic=0 VCE= -12V，Ic= -2mA Ic= -10mA，IB= -1mA Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector-Emitter Saturation Voltage Gain bandwidth product Common Base Output Capacitance BVEBO VBE VCE(sat) fT Cob MHz Ic= -2mA，VCE= -12V PF VCB= -10V, IE=0, f...
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