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■■APPLICATION：Audio power amplifier, High current application.
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RATING UNIT
VCBO
-30 V
VCEO
-30 V
VEBO -5 V
IC -2 A
PC 625 mW
TJ 150 ℃
Tstg -55~150 ℃
B1277
—PNP silicon —
■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 100
320 VCE= -2V，IC= -500mA
Collector Cut-off Current
ICBO
-0.1 µA VCB= -30V，IE=0
Emitter Cut-off Current
IEBO
-0.1 µA VEB= -5V，IC=0
Collector-Base Breakdown Voltage BVCBO
-30
V IC= -0.
B1277 Datasheet
