FGX C1675
NPN Transistor
| Part No. | C1675 |
|---|---|
| Datasheet | C1675 Download |
| Manufacturer |  FGX |
| Description | NPN Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO 50 V VCEO 30 V VEBO 5 V IC 50 mA PC 250 mW TJ 150 ℃ Tstg ﹣55~150 ℃ C1675 —NPN silicon —●●
ELECTRICAL CHARACTERISTICS
（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION DC Current Gain hFE 40 240 VCE= 6 V，Ic= 1 mA Collector Cut-off Current ICBO 0.1 µA VCB= 50V，IE=0 Emitter Cut-off Current IEBO 0.1 µA VEB= 5 V，Ic=0 Collector-Base Breakdown Voltage BVCBO 50 V Ic= 10µA，IE=0 Collector-Emitter Breakdown Voltage BVCEO 30 V Ic= 5 mA，IB=0 Emitter-Base Breakdown Voltage BVEBO 5 V IE= 10µA，Ic=0 Collector-Emitter Saturation Voltage VCE(sat) 0.08 0.3 V Ic= 10 mA，IB= 1 mA Base-Emitter Voltage VBE 0.67 0.75 V VCE= 6 V，Ic= 1 mA Gain bandwidth product fT 150 300 MHz Ic= 1 mA，VCE= 6 V Common Base Output Capacitance Cob 2.0 2.5 PF VCB= 6 V, IE=0, f = 1 MHz●●hFE Classification C...