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■■APPLICATION：General Purpose Applications.
■■MAXIMUM RATING（Ta＝25℃）
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC 500 mA
Collector Power Dissipation
PC 600 mW
Junction Temperature
TJ 150 ℃
Storage Temperature Range
Tstg ﹣55~150 ℃
C2274
—NPN silicon —
■■ ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
Common Emitter DC Current Gain hFE
60
320 VCE= 5V，Ic= 50mA
Collector Cut-off Current
ICBO
1.0 µA VCB= 40V，IE=0
Emitter Cut-off Current
IEBO
1.0 µA VEB= 4V，Ic=0
Collector-Base Breakdown Voltage BVCBO 60
V Ic= 0.
C2274 Datasheet
