APPLICATIONS
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●●MAXIMUM RATING（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector Power Dissipation PC 600 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150 ℃ C2274 —NPN silicon —
●● ELECTRICAL CHARACTERISTICS
（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Common Emitter DC Current Gain hFE 60 320 VCE= 5V，Ic= 50mA Collector Cut-off Current ICBO 1.0 µA VCB= 40V，IE=0 Emitter Cut-off Current IEBO 1.0 µA VEB= 4V，Ic=0 Collector-Base Breakdown Voltage BVCBO 60 V Ic= 0.1mA，IE=0 Collector-Emitter Breakdown Voltage BVCEO 40 V Ic= 1mA，IB=0 Emitter-Base Breakdown Voltage BVEBO 5 V IE= 0.1mA，Ic=0 Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.6 V Ic= 400mA，IB= 40mA Base-Emitter Saturation Voltage VBE(sat) 0.9 1.2 V Ic= 400mA, IB= 40mA Gain bandwidth product fT 120 MHz Ic= 10mA，VCE= 10V Common Base Output Capacitance Cob 5 PF VCB= 10V, IE...
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