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2SC2458
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS(TA=25 )
Parameter Symbol Limits Unit
Collector-Base Voltage
VCBO
V
Collector-Emitter Voltage VCEO
V
Emitter -Base Voltage
VEBO
V
Collector Current
Ic
mA
Collector Dissipation
Pc
mW
Junction Temperature
TJ
Storage Temperature
TSTG -55 ~ +150
ELECTRCAL CHARACTERISTICS(TA=25 )
Parameter
Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO IC= 0.1mA,IE=0
V
Collector-Emitter Breakdown Voltage BVCEO IC= 1mA,IB=0
V
Emitter -Base Breakdown Voltage BVEBO IE= 0.
C2458 Datasheet
