C5147
C5147 is NPN silicon Transistor manufactured by FGX.
-
- APPLICATION：FREQUENCY AMPLIFIER APPLICATION,
- NPN silicon
- -
- MAXIMUM RATINGS（Ta＝25℃）
PARAMETER
SYMBOLRATING UNIT
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation (Ta=25℃) Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range
VCBO
300 V
VCEO
300 V
VEBO
5V
IC 100 mA
PC 2 W
PC 10 W
TJ 150 ℃
Tstg ﹣55~150 ℃
1 TO-220 1.Base 2.Collector 3.Emitter
- - ELECTRICAL CHARACTERISTICS （Ta=25℃）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain hFE 60 200 VCE=10 V，Ic=10 mA
Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage...
