D1303
NPN Transistors
- - APPLICATION：Audio Muting Applications.
- NPN Silicon-
- - MAXIMUM RATINGS（Ta=25℃）
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation
VCBO VCEO VEBO Ic Ib Pc
25 V 20 V 12 V 0.3 A 0.03 A 0.4 W
Junction Temperature Storage Temperature Range
Tj 150 ℃ Tstg -55~150 ℃
- - ELECTRICAL CHARACTERISTICS（Ta=25℃，RG=10%）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
Collector-Base Breakdown Voltage BVcbo
V Ic=10u A Ie=0
Collector-Emitter Breakdown Voltage BVceo
V Ic=1m A Ib=0
Emitter-Base Breakdown Voltage BVebo 12
V Ie=10u A Ic=0
Collector Cut-off Current
Icbo
0.1 u A Vcb=25V Ie=0
Emitter Cut-off Current
Iebo
0.1 u A Veb=12V Ic=0
Base-Emitter Saturation Voltage Vbe(sat)
1 V Ic=0.1A Ib=10m A
Collector-Emitter Saturation Voltage Vce(sat)
0.25 V Ic=0.1A Ib=1m A
DC Current Gain Gain bandwidth product h FE 200
800 , Vce=2V Ic=4m A f T 60...
