FGX D1303
NPN Transistors
| Part No. | D1303 |
|---|---|
| Datasheet | D1303 Download |
| Manufacturer |  FGX |
| Description | NPN Transistors |
| Buy | Stock & Price |
APPLICATIONS
. D1303 —NPN Silicon—●●
MAXIMUM RATINGS
（Ta=25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation VCBO VCEO VEBO Ic Ib Pc 25 V 20 V 12 V 0.3 A 0.03 A 0.4 W Junction Temperature Storage Temperature Range Tj 150 ℃ Tstg -55~150 ℃●●
ELECTRICAL CHARACTERISTICS
（Ta=25℃，RG=10%） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector-Base Breakdown Voltage BVcbo 25 V Ic=10uA Ie=0 Collector-Emitter Breakdown Voltage BVceo 20 V Ic=1mA Ib=0 Emitter-Base Breakdown Voltage BVebo 12 V Ie=10uA Ic=0 Collector Cut-off Current Icbo 0.1 uA Vcb=25V Ie=0 Emitter Cut-off Current Iebo 0.1 uA Veb=12V Ic=0 Base-Emitter Saturation Voltage Vbe(sat) 1 V Ic=0.1A Ib=10mA Collector-Emitter Saturation Voltage Vce(sat) 0.25 V Ic=0.1A Ib=1mA DC Current Gain Gain bandwidth product hFE 200 800 , Vce=2V Ic=4mA fT 60 MHz Vce=10V Ic=1mA Common Base Output Capacitance Cob 10 pF Vcb=10V Ie=0 f=1MHz●●...