SC8050 Datasheet PDF

MAXIMUM RATINGS

（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 800 mA Collector Power Dissipation PC 800 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150 ℃ SC8050 —NPN silicon —
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ELECTRICAL CHARACTERISTICS

（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION DC Current Gain hFE 85 300 VCE= 1 V，Ic= 100 mA Collector Cut-off Current ICBO 0.1 µA VCB= 35 V，IE=0 Emitter Cut-off Current IEBO 0.1 µA VEB= 6 V，Ic=0 Collector-Base Breakdown Voltage BVCBO 40 V Ic= 0.1 mA，IE=0 Collector-Emitter Breakdown VoltageBVCEO 25 V Ic= 2 mA，IB=0 Emitter-Base Breakdown Voltage BVEBO 6 V IE= 0.1 mA，Ic=0 Base-Emitter Voltage VBE 1 V VCE= 1V，Ic= 10 mA Collector-Emitter Saturation Voltage VCE(sat) 0.5 V Ic= 500 mA，IB= 50 mA Base-Emitter Saturation Voltage VBE(sat) 1.2 V Ic=500 mA, IB= 50 mA Gain bandwidth product fT 100 MHz Ic= 50 mA，VCE= 10 V Common Base Output Capacitance...