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■■APPLICATION：POWER AMPLIFIER APPLICATION,SWITCH APPLICATION
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
6
V
Collector current
IC 800 mA
Collector Power Dissipation PC 800 mW
Junction Temperature
TJ 150 ℃
Storage Temperature Range
Tstg ﹣55~150 ℃
SC8050
—NPN silicon —
■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 85
300 VCE= 1 V，Ic= 100 mA
Collector Cut-off Current
ICBO
0.1 µA VCB= 35 V，IE=0
Emitter Cut-off Current
IEBO
0.1 µA VEB= 6 V，Ic=0
Collector-Base Breakdown Voltage BVCBO 40
V Ic= 0.
SC8050 Datasheet
