FH FHZxVx
Silicon Z-Diodes
| Part No. | FHZxVx |
|---|---|
| Datasheet | FHZxVx Download |
| Manufacturer | FH |
| Description | Silicon Z-Diodes |
| Buy | Stock & Price |
FEATURES
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● Very sharp reverse characteristic Very high stability Low reverse current level VZ-tolerance ± 5%
APPLICATIONS
Voltage stabilizationABSOLUTE MAXIMUM RATINGS
Parameter Power dissipation ºÄÉ¢¹¦ÂÊ Z-current ÎÈѹµçÁ÷ Junction temperature ½áΠStorage temperature range ´¢æÎÂ¶È Test Conditions RthJA<300K/W, Tamb=25°C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA °C °C Maximum Thermal Resistance Parameter Test Conditions Symbol Value Unit RthJA 500 K/W Junction ambient on PC board 50mmx50mmx1.6mmELECTRICAL CHARACTERISTICS
Parameter Forward voltage Test Conditions Type Symbol Min Typ Max Unit IF=100mA VF 1.2 V Type VZnom1) Test current IZT Maximum zeber Impedance ZZT ZZK at at IZT IZK=1mA IR µA 50 10 Maximum Reverse Leakage Current Test-Voltage Volts 1.0 1.0 Forward Voltage Vf at If=100mA V 1.2 1.2 Temperature coefficient V FHZ2V4 2.28-2.56 FHZ2V7 2.5-2.9 mA 5 5 Ohm 85 85 Ohm 600 600 %/°C -0.070 -0.070 Page 0 of 3 *2005 ÄêµÚ 2 °æ * All Rights Reserved ¹...
