FNK 30H80
N-Channel Enhancement Mode MOSFET
| Part No. | 30H80 |
|---|---|
| Datasheet | 30H80 Download |
| Manufacturer |  FNK |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
● 30H80 (TO-220) / 30H80A (TO-262)● 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V
● Super High Dense Cell Design
● Reliable and Rugged
● Avalanche Rated
● Lead Free and Green Devices Available (RoHS Compliant)
APPLICATIONS
● Power Management in Desktop Computer or DC/DC Converters. D G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy, L=0.5mH Note * Current limited by bond wire. 1 TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating Unit 30 ±20 150 -55 to 150 80 160 90 80* 48 50 20 2.5 50 225 V °C °C A A A W °C/W °C/W mJ 0752-7777359 El...
