30H80
Features
- 30H80 (TO-220) / 30H80A (TO-262)
- 30V/80A,
RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- Avalanche Rated
- Lead Free and Green Devices Available
(Ro HS pliant)
Applications
- Power Management in Desktop puter or
DC/DC Converters.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
IDP 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy, L=0.5m H Note
- Current limited by bond wire.
.fnk-tech.
TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating
Unit
30 ±20 150 -55 to 150 80 160 90 80- 48 50 20 2.5 50 225
V °C °C A A
W °C/W...
