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30H80 - N-Channel Enhancement Mode MOSFET

Key Features

  • 30H80 (TO-220) / 30H80A (TO-262).
  • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Avalanche Rated.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number 30H80
Manufacturer FNK
File Size 868.48 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet 30H80 Datasheet

Full PDF Text Transcription for 30H80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 30H80. For precise diagrams, and layout, please refer to the original PDF.

30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V • Super Hig...

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, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters.

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