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30H80 - N-Channel Enhancement Mode MOSFET

Features

  • 30H80 (TO-220) / 30H80A (TO-262).
  • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Avalanche Rated.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – 30H80

Datasheet Details

Part number 30H80
Manufacturer FNK
File Size 868.48 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet 30H80 Datasheet
Additional preview pages of the 30H80 datasheet.

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Full PDF Text Transcription

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30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters.
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