FNK01N01D Description
100V N-Channel MOSFET The FNK10N01D have been fabricated using the advanced MOSTMhigh voltage process that is designed to deliver high levels of performance and robustness in switching application By providing low R ,DS(on) Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power designs.
FNK01N01D Key Features
- VDS = 100V,ID =100A RDS(ON) < 213mΩ @ VGS=10V (Typ:200m Ω)