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FNK01N01D Datasheet PDF

FNK FNK01N01D

The FNK10N01D have been fabricated using the advanced MOSTMhigh voltage process that is designed to deliver high levels of performance and robustness in switching application By providing low R ,DS(on) Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power designs.
Part No. FNK01N01D
Datasheet FNK01N01D Download
Manufacturer
FNK
Description N-Channel Power MOSFET
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FNK01N01D datasheet page 1 preview

GENERAL FEATURES

● VDS = 100V,ID =100A RDS(ON) < 213mΩ @ VGS=10V (Typ:200m Ω) TO-251S top view

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current TA=25°C TA=70°C IDSM Maximum 100 ±20 100 65 340 16 12 Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range EAS, EAR PD PDSM TJ, TSTG Thermal Characteristics Parameter Maximum Junction-t
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