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FNK01N17 - N-Channel Power MOSFET

General Description

The FNK01N17 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =100V,ID =170A RDS(ON).

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Datasheet Details

Part number FNK01N17
Manufacturer FNK
File Size 1.11 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK01N17 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK01N17 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK01N17 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =170A RDS(ON) <5.0mΩ @ VGS=10V (Typ:4.