Datasheet Details
| Part number | FNK01N30T |
|---|---|
| Manufacturer | FNK |
| File Size | 1.05 MB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FNK01N30T Datasheet
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General Description
The FNK01N30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of other applications.
Key Features
- VDSS =100V,ID =300A RDS(ON) < 3.3mΩ @ VGS=10V （Typ：2.7mΩ）.
- Good stability and uniformity with high EAS.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Excellent package for good heat dissipation.