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FNK01N30T - N-Channel Power MOSFET

Description

The FNK01N30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of other applications.

Features

  • VDSS =100V,ID =300A RDS(ON) < 3.3mΩ @ VGS=10V （Typ：2.7mΩ）.
  • Good stability and uniformity with high EAS.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number FNK01N30T
Manufacturer FNK
File Size 1.05 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK01N30T Datasheet
Additional preview pages of the FNK01N30T datasheet.

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N-Channel Enhancement Mode Power MOSFET Description The FNK01N30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features ● VDSS =100V,ID =300A RDS(ON) < 3.3mΩ @ VGS=10V （Typ：2.
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