FNK FNK02N08E
The FNK02N08E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application.| Part No. | FNK02N08E |
|---|---|
| Datasheet | FNK02N08E Download |
| Manufacturer |  FNK |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary VDS (V) = 20V ID = 20A RDS(ON) < 7.5mΩ (VGS = 4.5V) RDS(ON) < 12mΩ (VGS = 2.5V) 18 27 36 45 Top View FNK02N08E D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Package Marking And Ordering Information Device Marking Device Device Package FNK02N08E FNK02N08E DFN3.3x3.3 Reel Size Ø330mm Tape width 12mmABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 100 92 400 3.1 2 -55 to 150 Thermal Characteristics Pa
