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FNK02N09S - N-Channel Power MOSFET

Datasheet Summary

Description

The FNK02N09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =15A RDS(ON) < 15mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin assignment.

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Datasheet Details

Part number FNK02N09S
Manufacturer FNK
File Size 0.96 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK02N09S Datasheet
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FNK02N09S FNK N-Channel Enhancement Mode Power MOSFET Description The FNK02N09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =15A RDS(ON) < 15mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=4.
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