Datasheet Details
| Part number | FNK02N09S |
|---|---|
| Manufacturer | FNK |
| File Size | 0.96 MB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FNK02N09S Datasheet
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General Description
The FNK02N09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
Key Features
- VDS = 20V,ID =15A RDS(ON) < 15mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package Schematic diagram Marking and pin assignment.