Datasheet Details
| Part number | FNK03P05E |
|---|---|
| Manufacturer | FNK |
| File Size | 816.89 KB |
| Description | P-Channel Power MOSFET |
| Datasheet |
 FNK03P05E Datasheet
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General Description
The FNK03P05E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =-30V,ID =-50A RDS(ON) < 9mΩ @ VGS=-10V Marking and pin assignment D G S Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation Top View DFN5X6 Bottom View.