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FNK03P05E - P-Channel Power MOSFET

Description

The FNK03P05E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-30V,ID =-50A RDS(ON) < 9mΩ @ VGS=-10V Marking and pin assignment D G S Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Top View DFN5X6 Bottom View.

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Datasheet Details

Part number FNK03P05E
Manufacturer FNK
File Size 816.89 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK03P05E Datasheet
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FNK03P05E FNK P-Channel Enhancement Mode Power MOSFET Description The FNK03P05E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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