FNK FNK03P05E
The FNK03P05E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK03P05E |
|---|---|
| Datasheet | FNK03P05E Download |
| Manufacturer |  FNK |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =-30V,ID =-50A RDS(ON) < 9mΩ @ VGS=-10V Marking and pin assignment D G S Schematic diagram● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Top View DFN5X6 Bottom View Application
● Battery and loading switching PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK03P05E FNK03P05E DFN 5x6 8L Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pulsed Drain Current Maximum Power Dissipation IDM P
