FNK FNK04N02A
N-Channel Power MOSFET
DESCRIPTION
TheFNK04N02A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK04N02AGENERAL FEATURES
● VDS =40V ,ID =140A RDS(ON) <3.9mΩ @ VGS=10V● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK04N02A FNK04N02A TO-220-3L Reel Size - Tape width -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Contin