FNK04N02A Datasheet | FNK

FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK04N02A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =40V ,ID =140A RDS(ON) <3.9mΩ @ VGS=10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply To-220 Top View Package...