FNK FNK08N03C
N-Channel Power MOSFET
DESCRIPTION
TheFNK08N03C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Schematic diagram TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package FNK08N03C FNK08N03C TO-251 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS