FNK FNK10P170K
The FNK10P170K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK10P170K |
|---|---|
| Datasheet | FNK10P170K Download |
| Manufacturer |  FNK |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. It is ESD protested. FNK10P170KGENERAL FEATURES
● VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density celldesign for ultra low on-resistance Schematic diagram Application
● Power switch
● DC/DC converters TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package FNK10P170K FNK10P170K TO-252-2L Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD
