FNK FNK11N03D
The FNK11N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK11N03D |
|---|---|
| Datasheet | FNK11N03D Download |
| Manufacturer |  FNK |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =30V,ID =110A RDS(ON) <3.6mΩ @ VGS=10V (Typ: 2.7mΩ) Schematic diagram● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package FNK11N03D FNK11N03D TO-252 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-C
