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FNK2310 - N-Channel Power MOSFET

General Description

The FNK2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram.

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Datasheet Details

Part number FNK2310
Manufacturer FNK
File Size 710.18 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK2310 Datasheet

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Full PDF Text Transcription for FNK2310 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FNK2310. For precise diagrams, tables, and layout, please refer to the original PDF.

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FNK2310 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.