FNK FNK3035P
P-Channel Power MOSFET
DESCRIPTION
TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Battery and loading switching Marking and pin assignment Top View DFN5X6 Bottom View PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK3035P FNK3035P DFN 5x6 -8L Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pu