Datasheet Details
| Part number | FNK3035P |
|---|---|
| Manufacturer | FNK |
| File Size | 1.11 MB |
| Description | P-Channel Power MOSFET |
| Datasheet |
 FNK3035P Datasheet
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General Description
TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability.