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FNK3035P - P-Channel Power MOSFET

Description

TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – FNK3035P

Datasheet Details

Part number FNK3035P
Manufacturer FNK
File Size 1.11 MB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK3035P Datasheet
Additional preview pages of the FNK3035P datasheet.

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Full PDF Text Transcription

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FNK3035P FNK P-Channel Enhancement Mode Power MOSFET Description TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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