Datasheet Details
| Part number | FNK3075PD |
|---|---|
| Manufacturer | FNK |
| File Size | 0.99 MB |
| Description | P-Channel Power MOSFET |
| Datasheet |
 FNK3075PD Datasheet
|
|
|
General Description
The FNK3075PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability.