FNK FNK3075PD
The FNK3075PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK3075PD |
|---|---|
| Datasheet | FNK3075PD Download |
| Manufacturer |  FNK |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Battery and loading switching TO-251 top view FNK3075PC/D TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package FNK3075PC FNK3075PC TO-251 FNK3075PD FNK3075PD TO-252 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pulsed Drain Current
