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FNK3085 - P-Channel Power MOSFET

Description

TheFNK3085 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-30V,ID =-85A R DS(ON) < 10.2mΩ @ VGS=-10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet preview – FNK3085

Datasheet Details

Part number FNK3085
Manufacturer FNK
File Size 1.12 MB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK3085 Datasheet
Additional preview pages of the FNK3085 datasheet.

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Full PDF Text Transcription

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FNK P-Channel Enhancement Mode Power MOSFET FNK3085 Description TheFNK3085 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-85A R DS(ON) < 10.
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