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FNK30H160D - N-Channel Power MOSFET

General Description

The FNK30H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =160A RDS(ON).

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Datasheet Details

Part number FNK30H160D
Manufacturer FNK
File Size 1.89 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK30H160D Datasheet

Full PDF Text Transcription for FNK30H160D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FNK30H160D. For precise diagrams, and layout, please refer to the original PDF.

FNK30H160D FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha...

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h technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =160A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.

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