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FNK3206 - N-Channel Power MOSFET

Description

The FNK 3206 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in automotive applications and a wide variety of other applications.

Features

  • VDS=60V; ID=210A@ VGS=10V; RDS(ON)< 3 mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation FNK3206 D G S.

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Datasheet Details

Part number FNK3206
Manufacturer FNK
File Size 2.37 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK3206 Datasheet

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Full PDF Text Transcription

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60V N-Channel MOSFET Description The FNK 3206 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
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