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FNK3317P - P-Channel MOSFET

Description

The FNK3317P combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

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Datasheet Details

Part number FNK3317P
Manufacturer FNK
File Size 1.32 MB
Description P-Channel MOSFET
Datasheet download datasheet FNK3317P Datasheet

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30V P-Channel MOSFET FNK3317P General Description The FNK3317P combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -12A < 15mΩ < 25mΩ Top View 18 27 36 45 D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=70°C Pulsed Drain Current C ID IDM TC=25°C Power Dissipation B TC=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -12 -7.8 -45 3.
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