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FNK4310 - N-Channel Power MOSFET

General Description

The FNK4310 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =100V,ID =140A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.6mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number FNK4310
Manufacturer FNK
File Size 1.15 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK4310 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK N-Channel Enhancement Mode Power MOSFET FNK4310 Description The FNK4310 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =140A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.