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FNK4435 - P-Channel Power MOSFET

General Description

The FNK4435 use s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number FNK4435
Manufacturer FNK
File Size 740.80 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK4435 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK4435 FNK P-Channel Enhancement Mode Power MOSFET Description The FNK4435 use s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. General Features ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.