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FNK4435 - P-Channel Power MOSFET

Description

The FNK4435 use s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number FNK4435
Manufacturer FNK
File Size 740.80 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK4435 Datasheet
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FNK4435 FNK P-Channel Enhancement Mode Power MOSFET Description The FNK4435 use s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. General Features ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.
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