Datasheet4U Logo Datasheet4U.com

FNK4610D - N-Channel Power MOSFET

Description

The FNK4610D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V (Typ:8.6mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number FNK4610D
Manufacturer FNK
File Size 1.58 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK4610D Datasheet

📁 Similar Datasheet

Other Datasheets by FNK
  • FNK4610 - N-Channel Power MOSFET
  • FNK4620 - Complementary Enhancement Mode Field Effect Transistor
  • FNK4040PD - P-Channel Power MOSFET
  • FNK4080K - N-Channel Power MOSFET
  • FNK4310 - N-Channel Power MOSFET
  • FNK4402 - N-Channel Power MOSFET
  • FNK4407 - P-Channel Power MOSFET
  • FNK4407A - P-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK4610D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK4610D General Features ● VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V (Typ:8.
Published: |