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FNK6003 - N-Channel Power MOSFET

Description

The FNK6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS =60V, ID = 3A RDS(ON).

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Datasheet Details

Part number FNK6003
Manufacturer FNK
File Size 1.17 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK6003 Datasheet
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FNK6003 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS =60V, ID = 3A RDS(ON) <105m Ω @ VGS =10V RDS(ON) < 125m Ω @ VGS=4.
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