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FNK6003 - N-Channel Power MOSFET

General Description

The FNK6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS =60V, ID = 3A RDS(ON).

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Datasheet Details

Part number FNK6003
Manufacturer FNK
File Size 1.17 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK6003 Datasheet

Full PDF Text Transcription for FNK6003 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FNK6003. For precise diagrams, and layout, please refer to the original PDF.

FNK6003 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wi...

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hnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS =60V, ID = 3A RDS(ON) <105m Ω @ VGS =10V RDS(ON) < 125m Ω @ VGS=4.

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