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FNK6075 - N-Channel Power MOSFET

Description

The FNK6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V (Typ:7.5? mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number FNK6075
Manufacturer FNK
File Size 1.57 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK6075 Datasheet
Additional preview pages of the FNK6075 datasheet.

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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK6075 General Features ● VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V (Typ:7.
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