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FNK60H10 - N-Channel Power MOSFET

Description

The FNK60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) Schematic diagram Special process technology for high E

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Datasheet Details

Part number FNK60H10
Manufacturer FNK
File Size 859.20 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK60H10 Datasheet
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FNK60H10 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature ● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.
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