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FNK60N60 - N-Channel Power MOSFET

Description

TheFNK60N60 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 60V,ID =60A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.0m Ω).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number FNK60N60
Manufacturer FNK
File Size 1.13 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK60N60 Datasheet
Additional preview pages of the FNK60N60 datasheet.

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FNK60N60 FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK60N60 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =60A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.
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